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收起 展开制造商 :
Rohm SemiconductorInfineon TechnologiesSTMicroelectronicsCree IncMicrosemi Power Products GroupGeneSiC Semiconductor
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不同 Vr、F 时的电容 :
1135pF @ 0V, 1MHz
120pF @ 0V,1MHz
138pF @ 1V, 1MHz
150pF @ 1V,1MHz
170pF @ 1V,1MHz
200pF @ 0V,1MHz
2100pF @ 0V, 1MHz
219pF @ 1V, 1MHz
220pF @ 0V,1MHz
291pF @ 1V, 1MHz
300pF @ 0V,1MHz
300pF @ 1V,1MHz
340pF @ 0V,1MHz
365pF @ 1V, 1MHz
375pF @ 0V,1MHz
414pF @ 0V,1MHz
450pF @ 0V,1MHz
480pF @ 0V,1MHz
520pF @ 1V, 1MHz
550pF @ 0V,1MHz
600pF @ 1V,1MHz
650pF @ 0V 1MHz
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不同 Vr 时的电流 - 反向漏电流 :
100µA @ 600V
100µA @ 650V
120µA @ 600V
150µA @ 600V
160µA @ 600V
200µA @ 300V
200µA @ 600V
4µA @ 1200V
40µA @ 1200V
40µA @ 650V
400µA @ 1200V
50µA @ 600V
60µA @ 650V
600µA @ 1200V
75µA @ 600V
80µA @ 650V
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